Title :
Three-dimensional topography simulation based on a level set method [deposition and etching processes]
Author :
Sheikholeslami, A. ; Heitzinger, C. ; Badrieh, F. ; Puchner, H. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Vienna, Austria
Abstract :
We present a general 3D topography simulator for the simulation of deposition and etching processes. The simulator is called ELSA (enhanced level set applications). ELSA is based on a level set method including narrow banding and a fast marching method. Modules for the transport of species, for surface reaction, and for the level set method are its basis.
Keywords :
etching; liquid phase deposition; semiconductor process modelling; surface topography; vapour deposition; 3D topography simulator; ELSA; deposition processes; etching processes; fast marching method; hyperbolic partial differential equation; level set method; narrow banding; species transport; surface reaction; topography simulation; Electronic equipment testing; Etching; Joining processes; Level set; Microelectronics; Narrowband; Reflection; Rough surfaces; Surface roughness; Surface topography;
Conference_Titel :
Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004. 27th International Spring Seminar on
Print_ISBN :
0-7803-8422-9
DOI :
10.1109/ISSE.2004.1490431
