Stress free assembly technique for a silicon based pressure sensor

Author

Offereins, H.L. ; Sandmaier, H. ; Folkmer, B. ; Steger, U. ; Lang, W.

Author_Institution

Fraunhofer-Inst. fur Festkorpertechnol., Munchen, Germany

fYear

1991

Firstpage

986

Lastpage

989

Abstract

A silicon-based piezoresistive pressure sensor that is mechanically decoupled from the housing is presented. The chip is mounted via an intermediate with bellow structures to the housing. Various forms and arrangements of bellow structures and their influence on the mechanical decoupling of the chip are observed. The advantages and disadvantages of the individual structures and setups are compared by means of finite-element-method simulations and metrological characterizations of the structures realized. The investigations show that assembly-induced stresses in the area of the piezoresistors can be reduced up to 99%.<>

Keywords

electric sensing devices; elemental semiconductors; finite element analysis; integrated circuit technology; microassembling; micromechanical devices; optimisation; packaging; pressure transducers; semiconductor technology; silicon; thermal stresses; Si; Si pressure sensor; assembly-induced stresses; bellow structures; elemental semiconductor; finite-element-method simulations; mechanically decoupled; metrological characterizations; micromechanical sensor; piezoresistive pressure sensor; stress-free assembly technique; Assembly; Bellows; Mechanical sensors; Packaging; Sensor phenomena and characterization; Silicon; Temperature dependence; Thermal expansion; Thermal sensors; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-87942-585-7

Type

conf

DOI

10.1109/SENSOR.1991.149056

Filename

149056