ALD ZrO2 processes for BEoL device applications

Author

Weinreich, W. ; Seidel, K. ; Polakowski, P. ; Riedel, S. ; Wilde, Lutz ; Triyoso, D.H. ; Nolan, M.G.

Author_Institution

Fraunhofer-Center Nanoelectronic Technol., Fraunhofer Inst. for Photonic Microsyst., Dresden, Germany

fYear

2014

fDate

28-30 May 2014

Firstpage

1

Lastpage

4

Abstract

In this paper three different ZrO₂ ALD processes are studied as high-k dielectric in BEoL device applications. One metal organic precursor is compared to a halide precursor used with two different oxidizing agents. The structure, composition and morphology of the films are analyzed on bare Si wafers and the electrical properties such as capacitance, leakage and reliability are investigated on fully integrated BEoL decoupling capacitors. One of the halide ALD processes is identified as the most promising candidate for BEoL capacitor applications.

Keywords

atomic layer deposition; capacitors; high-k dielectric thin films; reliability; zirconium compounds; BEoL device; Si; ZrO₂; bare silicon wafers; capacitance; electrical properties; fully integrated BEoL decoupling capacitors; halide ALD processes; halide precursor; high-k dielectric; leakage; metal organic precursor; oxidizing agents; reliability; Capacitance; Capacitors; Films; High K dielectric materials; Leakage currents; Temperature measurement; Tin; BEoL application; MIM capacitors; atomic layer deposition;

fLanguage

English

Publisher

ieee

Conference_Titel

IC Design & Technology (ICICDT), 2014 IEEE International Conference on

Conference_Location

Austin, TX

Type

conf

DOI

10.1109/ICICDT.2014.6838604

Filename

6838604