PI001

(K, Na)NbO3 (KNN) perovskite materials have been studied as a promising candidate for lead-free piezoelectric material due to environmentally and biologically benign piezoelectric devices. However, there are few reports on the growth of KNN thin films by chemical solution deposition, and their properties are still insufficient for the application of devices. KNN thin films were fabricated on SiO2/Si(100) and Pt(111)/SiO2/ Si(100) substrates by chemical solution deposition. By applying different annealing conditions highly oriented KNN was achieved from 550??C. Weight loss and exothermic peaks were confirmed by thermal analysis (TG-DTA). Structural characterization of KNN was measured by X-ray diffraction. The surface morphology was evaluated by SEM. At optimized condition SEM showed uniform and dense microstructures. Electrical properties of KNN was also measured. The excessive amount of Na and K ions was added in order to reduce leakage current and compensate their volatile nature.