DocumentCode
1606367
Title
Custom Fabricated High-Q Analog Dual-Gap RF MEMS Varactors
Author
McFeetors, G. ; Okoniewski, M.
fYear
2006
Firstpage
155
Lastpage
158
Abstract
An RF MEMS capacitor design, fabrication and measurement is described. The capacitor´s dual gap height architecture allows for continuous electrostatic tuning with low resistive loss and a large tuning range. Two voltage sources are used to reach the full tuning potential of the device. Measurements indicate a capacitance tuning range of 6.2:1 with a quality factor over 50 at 30 GHz for 310 fF.
Keywords
Q-factor; circuit tuning; micromechanical devices; varactors; RF MEMS capacitor design; RF MEMS varactors; capacitance tuning; continuous electrostatic tuning; dual gap height architecture; quality factor; resistive loss; tuning range; voltage sources; Bridge circuits; Capacitance; Capacitors; Conductors; Electrodes; Electrostatics; Micromechanical devices; Radiofrequency microelectromechanical systems; Varactors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwaves, Radar & Wireless Communications, 2006. MIKON 2006. International Conference on
Conference_Location
Krakow
Print_ISBN
978-83-906662-7-3
Type
conf
DOI
10.1109/MIKON.2006.4345127
Filename
4345127
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