DocumentCode
1607643
Title
Development of PLZT films on base-metal foils by chemical solution deposition
Author
Ma, B. ; Kwon, D.K. ; Narayanan, M. ; Balachandran, U.
Author_Institution
Energy Systems Division, Argonne National Laboratory, IL 60439, USA
Volume
3
fYear
2008
Firstpage
1
Lastpage
2
Abstract
Thin films of Pb0.92La0.08Zr0.52Ti0.48O3 were deposited on Ni foils by chemical solution deposition to form film-on-foil capacitors with high dielectric constant. These capacitors can be embedded into printed wire boards. We measured dielectric constants of 1300 (at 25??C) and 1800 (at 150??C), as well as leakage current densities ??6.6 ?? 10??9 (at 25??C) and 1.4 ?? 10-8 A/cm2 (at 150??C), breakdown field strength >1.4 MV/cm, and energy density of 16.5 J/cm3.
Keywords
Capacitors; Chemicals; Current measurement; Density measurement; Dielectric measurements; Dielectric thin films; Energy measurement; High-K gate dielectrics; Sputtering; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location
Santa Re, NM, USA
ISSN
1099-4734
Print_ISBN
978-1-4244-2744-4
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2008.4693866
Filename
4693866
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