Structural and chemical analysis of self-aligned titanium silicide formed by furnace annealing

Author

Barbarini, Elena ; Guastella, Salvatore ; Pirri, Fabrizio

Author_Institution

Dept. of Mater. Sci. & Chem. Eng., Politec. di Torino, Torino, Italy

fYear

2010

Firstpage

333

Lastpage

336

Abstract

In this paper the furnace annealing effects on the titanium silicide formation over a range of temperatures are investigated using physical and chemical measurements. In particular the formation steps and the properties of the interface between TiSi₂ and Si have been characterized by mean of Transmission Electron Microscopy. The experiments have been performed with the final aim to obtain Schottky barrier diodes (SBDs) whose fabrication process is suitable for a production line.

Keywords

Schottky diodes; annealing; chemical analysis; crystal structure; silicon; titanium compounds; transmission electron microscopy; Schottky barrier diodes; TEM; TiSi₂-Si; TiSi₂-Si interface properties; chemical analysis; chemical measurements; fabrication process; formation steps; furnace annealing effects; physical measurements; production line; self-aligned titanium silicide; structural analysis; titanium silicide formation; transmission electron microscopy; Annealing; Furnaces; Schottky diodes; Silicides; Silicon; Temperature measurement; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4244-8574-1

Type

conf

DOI

10.1109/ASDAM.2010.5666357

Filename

5666357