• DocumentCode
    1610285
  • Title

    Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique

  • Author

    Kinoshita, A. ; Tsuchiya, Y. ; Yagishita, A. ; Uchida, K. ; Koga, J.

  • Author_Institution
    Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
  • fYear
    2004
  • Firstpage
    168
  • Lastpage
    169
  • Abstract
    A novel approach for achieving high-performance Schottky-source/drain MOSFETs (SBTs: Schottky Barrier Transistors) is proposed. The dopant segregation (DS) technique is employed and significant modulation of Schottky barrier height is demonstrated. The DS-SBT fabricated with the current CoSi2 process show competitive drive current and better short-channel-effect immunity compared to the conventional MOSFET. In conclusion the DS-Schottky junction is useful for the source/drain of advanced MOSFETs.
  • Keywords
    MOSFET; Schottky barriers; segregation; semiconductor doping; CoSi2; Schottky barrier height; dopant segregation technique; high-performance Schottky-source/drain MOSFETs; Conducting materials; Doping; Laboratories; Large scale integration; Leakage current; MOSFETs; Research and development; Schottky barriers; Silicidation; Silicides;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
  • Print_ISBN
    0-7803-8289-7
  • Type

    conf

  • DOI
    10.1109/VLSIT.2004.1345459
  • Filename
    1345459
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1610285