Title :
A model for negative bias temperature instability (NBTI) in oxide and high κ pFETs 13×-C6D8C7F5F2
Author :
Zafar, Sufi ; Lee, Byoung H. ; Stathis, James ; Callegari, Allesandro ; Ning, Tak
Author_Institution :
IBM Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A model for the negative bias temperature instability (NBTI) is proposed. Unlike previous empirical models, this model is derived from physics principles. The model attributes NBTI to de-passivation of SiO2/Si interface and its two distinguishing features are: application of statistical mechanics to calculate depassivated site density increase and the assumption that the hydrogen diffusion is dispersive. The model is verified using new and published NBTI data for SiO2/poly, SiON/W and HfO2/W pFETs. A comparison between high κ and conventional oxide is made.
Keywords :
CMOS integrated circuits; MOSFET; elemental semiconductors; semiconductor device models; semiconductor-insulator boundaries; silicon; silicon compounds; SiO2-Si; SiO2/Si interface; de-passivation; depassivated site density; negative bias temperature instability; Annealing; Dielectric measurements; High K dielectric materials; High-K gate dielectrics; Hydrogen; Negative bias temperature instability; Niobium compounds; Predictive models; Pulse measurements; Titanium compounds;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345483
