Title :
Rolled-up InGaAs/GaAs quantum dot micro- and nanotube lasers
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
Abstract :
This work achieved, for the first time, lasing in rolled-up semiconductor tubes at room temperature. The devices are characterized an ultralow threshold power (~ 4 ¿W), an intrinsic lasing linewidth of ~ 0.2 0.3 nm, and a linear polarization with the electric field parallel to the tube surface.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; light polarisation; nanophotonics; nanotube devices; optical pumping; photoluminescence; quantum dot lasers; self-assembly; InGaAs-GaAs; emission properties; gain media; laser fabrication; linear polarization; microphotoluminescence spectroscopy; microtube devices; rolled-up quantum dot microtube laser; rolled-up quantum dot nanotube laser; self-organized quantum dots; semiconductor tubes; temperature 293 K to 298 K; Etching; Gallium arsenide; Indium gallium arsenide; Nanoscale devices; Optical pumping; Quantum dot lasers; Quantum dots; Scanning electron microscopy; Semiconductor lasers; Substrates;
Conference_Titel :
Photonics Society Winter Topicals Meeting Series (WTM), 2010 IEEE
Conference_Location :
Majorca
Print_ISBN :
978-1-4244-5240-8
Electronic_ISBN :
978-1-4244-5241-5
DOI :
10.1109/PHOTWTM.2010.5421924
