Title :
A SiGe140-GHz low power Gm-boosted down-conversion mixer
Author :
Kim, Dong-Hyun ; Rieh, Jae-Sung
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
Abstract :
In this work, a 140 GHz down-conversion mixer has been developed based on SiGe BiCMOS technology. The mixer employs a Gm-boosting method intended for simultaneous achievement of improved conversion gain and reduced LO power requirement. Measured peak conversion gain is 7.4 dB at RF frequency of 135.6 GHz and LO power of 10 dBm at 134 GHz. The entire circuit draws 0.67 mA from a 2.2 V supply. Measured input referred P-1dB is -21 dBm.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; field effect MIMIC; low-power electronics; millimetre wave mixers; semiconductor materials; BiCMOS technology; SiGe; current 0.67 mA; frequency 134 GHz; frequency 135.6 GHz; frequency 140 GHz; gain 7.4 dB; low power Gm-boosted down-conversion mixer; voltage 2.2 V; BiCMOS integrated circuits; Conferences; Gain; Mixers; Radio frequency; Silicon germanium; Topology; Mixers; gain; millimeter wave circuits;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5
