Title :
The application of scanning capacitance microscopy in device failure analysis [doping profile determination]
Author :
Lau, Y.M. ; Lim, V.S.W. ; Ang, L.B. ; Trigg, A.
Author_Institution :
Micron Semicond. Asia Pte. Ltd., Singapore, Singapore
Abstract :
In this paper, we present the application of scanning capacitance microscopy (SCM) in the failure analysis of 0.11 μm technology devices. The SCM results are compared with chemical staining data, and the limitations of chemical staining are illustrated. Cross-sectional SCM imaging and the advantages and limitations of the SCM technique are discussed.
Keywords :
capacitance measurement; doping profiles; failure analysis; scanning probe microscopy; semiconductor device measurement; 0.11 micron; chemical staining; cross-sectional SCM imaging; device failure analysis; dopant profiles; implantation profiles; scanning capacitance microscopy; scanning probe microscope; Capacitance; Chemical analysis; Failure analysis; Hafnium; Implants; Microscopy; Probes; Rough surfaces; Semiconductor devices; Surface roughness;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Print_ISBN :
0-7803-8454-7
DOI :
10.1109/IPFA.2004.1345555
