DocumentCode :
1612965
Title :
Isolation issues in smart power integrated circuits
Author :
Charitat, G.
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
Volume :
1
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
15
Abstract :
This paper analyses a major problem inherent to smart power integrated circuits employed with inductive loads, i.e. the rejection of carriers inside the substrate during switching off. Firstly, the physical mechanisms involved are presented as well as some solutions to minimize the perturbations inside the common substrate of the integrated circuit. Secondly, use of dielectrically isolated substrate to avoid the problem is critically assessed and leads to the conclusion that DI is not a perfect solution regarding the thermal dissipation and the switching speed.
Keywords :
isolation technology; leakage currents; minority carriers; power integrated circuits; DI; carrier rejection; dielectrically isolated substrate; inductive loads; perturbations; physical mechanisms; smart power integrated circuits; switching speed; thermal dissipation; Dielectric devices; Dielectric substrates; Diodes; Integrated circuit technology; Isolation technology; Leakage current; Low voltage; Microelectronics; Power integrated circuits; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Print_ISBN :
0-7803-7235-2
Type :
conf
DOI :
10.1109/MIEL.2002.1003143
Filename :
1003143
Link To Document :
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