Title :
High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED
Author :
Toh, Suey Li ; Li, K. ; Ang, C.H. ; Er, E. ; Redkar, S. ; Loh, K.P. ; Boothroyd, C.B. ; Chan, L.
Author_Institution :
Chartered Semicond. Manuf. Ltd., Singapore
Abstract :
Mechanical stress due to trench isolation and contact etch-stop-layers (ESLs) has been reported to show a marked influence on the electron and hole mobility of nanoscaled MOSFETs. Conventional tools such as micro-Raman spectroscopy and X-ray diffraction for measuring strain are limited in resolution. By using convergent beam electron diffraction (CBED) with nanometer spatial resolution, we have evaluated the mechanical stress induced in deep sub-micron devices by different etch-stop-layers (ESLs) and have demonstrated that the stress along the channel region can be engineered through the implementation of different ESLs.
Keywords :
CMOS integrated circuits; MOSFET; dielectric thin films; electron diffraction; electron mobility; etching; hole mobility; internal stresses; isolation technology; nanoelectronics; semiconductor device measurement; semiconductor device reliability; stress measurement; CBED; ESL implementation; X-ray diffraction; channel region stress; contact etch-stop-layers; convergent beam electron diffraction; deep sub-micron semiconductor devices; electron mobility; high spatial resolution strain measurement; hole mobility; measuring resolution; mechanical stress; micro-Raman spectroscopy; nanoscaled MOSFET; spatial resolution; strain; trench isolation; Charge carrier processes; Electron beams; Electron mobility; Etching; MOSFETs; Semiconductor devices; Spatial resolution; Strain measurement; Stress; X-ray diffraction;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Print_ISBN :
0-7803-8454-7
DOI :
10.1109/IPFA.2004.1345571
