Title :
Silicon and Silicon Carbide Avalanche Diodes for Use in Pulse Sharpening and Closing Switch Applications
Author :
Focia, Ronald J.
Author_Institution :
Pulsed Power Labs., Inc., Edgewood
Abstract :
Summary form only given. The preliminary experimental results of an ongoing research effort are presented which focuses on numerical modeling, fabrication and utilization of silicon (Si) and silicon carbide (SiC) avalanche diodes (AD) in pulse sharpening and closing switch applications. The ultimate goal of the effort is to provide a source for components and designs for multi-kilovolt, low jitter, all solid-state ultra-wideband (UWB) microwave sources.
Keywords :
avalanche diodes; microwave devices; power semiconductor diodes; semiconductor device models; silicon; silicon compounds; wide band gap semiconductors; Si; SiC; avalanche diodes; closing switches; pulse sharpening; semiconductor device models; solid-state ultra-wideband microwave sources; Circuit simulation; Fabrication; Jitter; Laboratories; Pulse generation; Semiconductor diodes; Silicon carbide; Solid state circuits; Switches; Voltage;
Conference_Titel :
Plasma Science, 2007. ICOPS 2007. IEEE 34th International Conference on
Conference_Location :
Albuquerque, NM
Print_ISBN :
978-1-4244-0915-0
DOI :
10.1109/PPPS.2007.4345502
