Title :
OCVD carrier lifetime measurements on an inhomogeneous diode structure
Author :
Benda, V. ; Novák, Z.
Author_Institution :
Dept. of Electrotechnol., Tech. Univ. Prague, Czech Republic
fDate :
6/24/1905 12:00:00 AM
Abstract :
This paper investigates the problem of evaluating the lifetime of a carrier measured by the OCVD (open circuit voltage decay) method on structures with a non-uniform carrier lifetime distribution. A simple model of two diodes connected in parallel (lumped charge approximation) has been used for evaluating the measured carrier lifetime. The theoretical analysis was experimentally verified
Keywords :
carrier lifetime; electron-hole recombination; semiconductor device measurement; semiconductor device models; semiconductor diodes; voltage measurement; OCVD method; inhomogeneous diode structure; lumped charge approximation; nonuniform carrier lifetime distribution; open circuit voltage decay carrier lifetime measurements; parallel connected twin diodes; Charge carrier lifetime; Charge measurement; Circuits; Current measurement; Diodes; Insulated gate bipolar transistors; Silicon devices; Temperature; Thyristors; Voltage;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003220
