• DocumentCode
    1614930
  • Title

    Appearance of enriched Hg regions in solid state in CdHgTe crystals

  • Author

    Vlasenko, O.I. ; Vlasenko, Z.K. ; Mozol, P.E.

  • Author_Institution
    Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
  • Volume
    1
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    409
  • Lastpage
    412
  • Abstract
    Electron-probe methods have been used to study the evolution of the topology of near-surface macroscopic growth defects and macroscopic defects introduced by mechanical processing in CdxHg1-x Te (x = 0.2) crystals (CMT crystals). When the samples were stored for a long time, the formation of inclusions saturated with mercury or tellurium was observed in the region of the macroscopic defects. The effective self-diffusion coefficients of mercury, estimated from the growth rate of the mercury inclusions at their formation stage, exceeded those known from the literature. The possible causes of such a discrepancy are discussed; they are connected, in particular, with the fact that the mass-transfer process involves internal elastic stresses that arise when the surface is mechanically processed, when diffusional fluxes that differ in their mechanisms are applied, etc
  • Keywords
    cadmium compounds; crystal defects; electron probe analysis; environmental degradation; grinding; inclusions; internal stresses; mass transfer; mercury compounds; polishing; self-diffusion; Cd0.2Hg0.8Te crystals; CdHgTe; CdHgTe solid solutions; diffusional flux mechanisms; electron-probe test methods; enriched Hg regions; grinding; growth defect evolution; growth defect topology; inclusion formation; internal elastic stresses; mass-transfer process; mechanical polishing; mechanical process-induced macroscopic defects; mercury effective self-diffusion coefficients; mercury inclusion formation stage; mercury inclusion growth rate; mercury saturated inclusions; near-surface macroscopic growth defects; solid state CMT crystals; surface mechanical processing; tellurium saturated inclusions; Crystalline materials; Crystals; Degradation; Impurities; Mercury (metals); Photodetectors; Solid state circuits; Surface reconstruction; Tellurium; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2002. MIEL 2002. 23rd International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-7235-2
  • Type

    conf

  • DOI
    10.1109/MIEL.2002.1003224
  • Filename
    1003224