DocumentCode
1615167
Title
Study of relationship between 300 mm Si wafer surface and annealing temperatures for advanced semiconductor-based applications
Author
Wocko, Andreas ; Radovanovic, Sanda ; Dighe, Prasanna
Author_Institution
KLA-Tencor GmbH, Dresden, Germany
fYear
2010
Firstpage
154
Lastpage
157
Abstract
Surface morphology dependence on annealing conditions is one of the most important parameters that is being monitored in current manufacturing environments. Understanding the science behind surface properties and anneal temperatures is of high interest. This paper explores this phenomenon in more detail and its practical applications for manufacturing environments.
Keywords
annealing; elemental semiconductors; semiconductor device manufacture; silicon; surface morphology; Si; Si wafer surface; annealing temperatures; manufacturing environments; size 300 mm; surface morphology dependence; Annealing; Conductivity; Surface morphology; Surface roughness; Surface topography; Surface treatment; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference (ASMC), 2010 IEEE/SEMI
Conference_Location
San Francisco, CA
ISSN
1078-8743
Print_ISBN
978-1-4244-6517-0
Type
conf
DOI
10.1109/ASMC.2010.5551438
Filename
5551438
Link To Document