Title :
Aluminum nano interconnects
Author :
Steinlesberger, G. ; Schindler, G. ; Engelhardt, M. ; Steinhögl, W. ; Traving, M.
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
The physical and technological limitations for aluminium interconnect technology in the deep sub-100 nm regime are investigated. Using a wet chemical process for hard mask trimming the fabrication of nano Al interconnects has been demonstrated. Based on first electrical measurements the electrical size effect of Al interconnects with critical dimensions far below 100 nm as well as the impact of side wall roughness are discussed.
Keywords :
aluminium; etching; integrated circuit interconnections; 100 nm; Al; critical dimensions; electrical measurements; electrical size effect; hard mask trimming; nano Al interconnects; physical limitations; side wall roughness; technological limitations; wet chemical process; Aluminum; Artificial intelligence; Chemical technology; Conductivity; Copper; Electrons; Etching; Grain size; Metallization; Scattering;
Conference_Titel :
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN :
0-7803-8308-7
DOI :
10.1109/IITC.2004.1345681
