Title :
Impact of channel doping on the device and NBTI performance in FinFETs for low power applications
Author :
Sachid, Angada B. ; Chenming Hu
Author_Institution :
Electr. Eng. & Comput. Sci., Univ. of California Berkeley, Berkeley, CA, USA
Abstract :
We present device-level characterization of digital, analog and NBTI parameters for p-FinFETs with different channel doping. We show that using channel doping we can trade-off device and NBTI performance. In p-FinFETs, Arsenic doped channel has better digital and analog performance and Boron doped channel has superior NBTI performance. Forward body bias reduces NBTI degradation in p-FinFETs.
Keywords :
MOSFET; low-power electronics; negative bias temperature instability; semiconductor doping; NBTI performance; analog performance; arsenic doped channel; boron doped channel; channel doping; device-level characterization; digital performance; forward body bias; low power applications; negative- bias temperature instability; p-FinFETs; Boron; Doping; Electric fields; FinFETs; Logic gates; Performance evaluation; Threshold voltage;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2014.6839654
