Title :
An ultra-low power CMOS subthreshold voltage reference
Author :
Yunling Luo ; Jun Zhang ; Qiaobo Wang ; Yanhang Zeng ; Jianguo Hu ; Hong-Zhou Tan
Author_Institution :
Dept. of Electron. & Commun. Eng., Sun Yat-sen Univ., Guangzhou, China
Abstract :
A voltage reference circuit operating with nanopower consumption has been proposed in this paper. There are only two current branches in the core circuit. The simulation results show that the average output reference voltage is 0.257V, and the line sensitive is 6.9ppm/V in a supply voltage range from 0.6V to 2V. Resulting from the approximated consideration of body effect, a temperature coefficient of 2.5ppm/°C is achieved in a temperature range from -20°C to 80°C. The power consumption is minimized to 1.5nW at room temperature while the power supply rejection ratio is -40dB at 100Hz and -29dB at 10MHz.
Keywords :
CMOS integrated circuits; low-power electronics; nanoelectronics; reference circuits; body effect; core circuit; frequency 10 MHz; nanopower consumption; power 1.5 nW; power supply rejection ratio; temperature -20 degC to 80 degC; temperature 293 K to 298 K; ultralow power CMOS subthreshold voltage reference circuit; voltage 0.6 V to 2 V; CMOS integrated circuits; Low-power electronics; MOSFET; Power demand; Temperature distribution; Temperature sensors; Threshold voltage; CMOS analog circuit; subthreshold; temperature compensation; ultra low power; voltage reference;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482788
