Title :
A comparative study on analog/RF performance of Pt-germanide and Pt-silicide Schottky barrier pMOSFETs
Author :
Patil, Ganesh C. ; Qureshi, Shaima
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur, Kanpur, India
Abstract :
In this paper for the first time a comparative study on analog/RF performance of Pt-germanide (PtGe) and Pt-silicide (PtSi) dopant-segregated Schottky barrier (DSSB) germaniumon-insulator (GOI) and DSSB silicon-on-insulator (SOI) p-channel MOSFETs has been carried out by using the two dimensional MEDICI simulator. It has been found that, the hole barrier lowering and thinning induced by dopant-segregation at PtGe-Ge interface reduces the source/drain-to-channel contact resistance due to which the analog/RF figures of merit such as transconductance, unity-gain frequency, maximum power gain frequency, short-circuit current gain and the unilateral power gain of PtGe-GOI DSSB pMOSFET are improved by ~42%, ~28%, ~34%, ~30% and ~71% respectively over the PtSi-SOI DSSB pMOSFET. Thus, PtGe-GOI DSSB pMOSFET is a suitable candidate for future analog/RF circuits.
Keywords :
MOSFET; Schottky barriers; platinum compounds; silicon-on-insulator; MEDICI simulator; PtGe; PtSi; SOI; Schottky barrier pMOSFET; analog/RF circuits; dopant-segregated Schottky barrier; dopant-segregation; germaniumon-insulator; maximum power gain frequency; p-channel MOSFET; short-circuit current gain; silicon-on-insulator; source/drain-to-channel contact resistance; transconductance; unilateral power gain; unity-gain frequency; Decision support systems; Germanium; Logic gates; MOSFET; Radio frequency; Schottky barriers; Semiconductor process modeling; Schottky barrier; analog/RF; dopant-segregation; germanide; silicide;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482801
