DocumentCode
1619230
Title
Power-to-failure investigation for PNP-based ESD protections: From ns to ms
Author
Cerati, Lorenzo ; Di Biccari, Leonardo ; Andreini, Antonio ; Castiglione, Corrado ; Blanc, Daisy
Author_Institution
STMicroelectron., Agrate Brianza, Italy
fYear
2013
Firstpage
1
Lastpage
10
Abstract
Power-to-Failure of PNP transistors used as ESD protection devices is analysed in this work both at experimental and simulation level. A complete analysis from ns to ms range is provided to evaluate the overall robustness of this solution not only for ESD events but also for EOS-like stresses.
Keywords
electrostatic discharge; transistors; EOS; ESD protection devices; PNP transistors; power-to-failure investigation; Computer architecture; Data models; Electrostatic discharges; Performance evaluation; Robustness; Stress; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013 35th
Conference_Location
Las Vegas, NV
ISSN
0739-5159
Type
conf
Filename
6635913
Link To Document