Title :
Evaluation of gate oxide reliability using luminescence method
Author :
Uraoka, Y. ; Yoshikawa, H. ; Tsutsu, N. ; Akiyama, S.
Author_Institution :
Matsushita Electr. Ind. Co., Ltd., Osaka, Japan
Abstract :
This system permits measurements of the initial breakdown characteristics, determination of the stress condition, and failure analysis consistently based on the evaluation theory. The failure modes both in initial characteristics and the time-dependent dielectric breakdown (TDDB) characteristics are experimentally found to correspond to each other. The intrinsic breakdown is considered to be caused by the concentration of the current in the edge region. The LOCOS structure plays an important role in the lifetime of the gate oxide
Keywords :
MOS integrated circuits; VLSI; circuit reliability; electric breakdown of solids; photoluminescence; LOCOS structure; edge region; evaluation theory; failure analysis; gate oxide reliability; initial breakdown characteristics; luminescence method; stress condition; time-dependent dielectric breakdown; Cameras; Electric breakdown; Electrons; Failure analysis; Luminescence; Optical microscopy; Spontaneous emission; Stimulated emission; Stress measurement; Very large scale integration;
Conference_Titel :
Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-87942-588-1
DOI :
10.1109/ICMTS.1990.161715
