DocumentCode
1619783
Title
Contacts charge transport and additional noise properties of semiconductor CdTe sensors
Author
Sik, O. ; Grmela, L. ; Sikula, Jessica
Author_Institution
Dept. of Phys., Brno Univ. of Technol., Brno, Czech Republic
fYear
2012
Firstpage
1
Lastpage
4
Abstract
Contact quality analysis of Cadmium-Telluride detector has been conducted. IV characteristics at operating temperatures T = 305 K, 315 K, 325 K were measured. Results showed asymmetry of IV characteristics for negative and positive bias indicated by increased leakage current in case of negative biasing. Noise contributions of contacts were evaluated. Reverse biased contact in negative was found as dominant source of low frequency noise.
Keywords
II-VI semiconductors; cadmium compounds; leakage currents; noise; semiconductor counters; CdTe; IV characteristics; cadmium-telluride detector; contact charge transport; contact quality analysis; leakage current; low frequency noise; negative bias; noise properties; positive bias; reverse biased contact; semiconductor sensors; temperature 305 K; temperature 315 K; temperature 325 K; Contacts; Current measurement; Detectors; Metals; Noise; Temperature; Temperature measurement; CdTe; noise; quality analysis; spectrometer;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location
Bangkok
Print_ISBN
978-1-4673-5694-7
Type
conf
DOI
10.1109/EDSSC.2012.6482863
Filename
6482863
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