Comparison of polysilicon and silicon-carbon emitters with enhanced emitter efficiency

Author

Emons, C.H.H. ; Koster, R. ; Paxman, D. ; Theunissen, M.J.J.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1994

Firstpage

72

Lastpage

75

Abstract

Plasma-Enhanced CVD (PECVD) and Low-Pressure CVD (LPCVD) silicon-carbon emitters have been fabricated in the same transistor layout together with the best conventional implanted polysilicon emitters. In this way the first direct comparison of DC-transistor characteristics has been made. The highest emitter Gummel numbers are achieved for PECVD silicon-carbon emitters (up to 92*10¹² s/cm⁴ compared to 66*10¹² s/cm⁴ for the best implanted polysilicon emitter), whereas emitter series resistance is acceptably low (0.97*10^-6 Ω*cm²). Moreover, the thermal budget for emitter formation is extremely low (30 minutes at 750°C)

Keywords

plasma CVD; 30 min; 750 degC; DC-transistor characteristics; Si; SiC; emitter Gummel numbers; emitter efficiency; emitter formation; emitter series resistance; implanted polysilicon emitters; low-pressure CVD; plasma-enhanced CVD; thermal budget; transistor layout; Amorphous materials; Annealing; Chemical technology; Chemical vapor deposition; Conductivity; Laboratories; Photonic band gap; Plasma chemistry; Plasma temperature; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-1316-X

Type

conf

DOI

10.1109/BIPOL.1994.587863

Filename

587863