Title :
Process control monitor based extraction procedure for statistical compact MOSFET modeling
Author :
Yakupov, Marat ; Tomaszewski, Daniel ; Grabinski, Wladyslaw
Author_Institution :
Div. of Silicon Microsyst. & Nanostruct. Technol., Inst. of Electron Technol., Warsaw, Poland
Abstract :
The paper reviews different approaches of the semiconductor device and integrated circuit statistical modeling. A backward propagation of variance method has been used to estimate the EKV compact model parameter distributions. A detailed analysis of this approach has been done in terms of efficiency, and accuracy aspects. The determined distributions of the EKV model process parameters responsible for an analog IC variability have been used for evaluation of statistical distributions of simple operational amplifier performances.
Keywords :
CMOS analogue integrated circuits; MOSFET; Monte Carlo methods; integrated circuit modelling; operational amplifiers; parameter estimation; process control; semiconductor device models; statistical distributions; CMOS technology; EKV compact model parameter distributions estimation; Monte-Carlo analysis; analog IC variability; backward propagation of variance method; integrated circuit statistical modeling; operational amplifier; process control monitor based extraction procedure; semiconductor device; statistical compact MOSFET modeling; statistical distribution evaluation; Analytical models; CMOS integrated circuits; Integrated circuit modeling; MOS devices; Phase change materials; Semiconductor device modeling; CMOS; EKV; Monte-Carlo analysis; analog IC; backward propagation of variance; corner analysis; operational amplifier performance; statistical modeling;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2010 Proceedings of the 17th International Conference
Conference_Location :
Warsaw
Print_ISBN :
978-1-4244-7011-2
Electronic_ISBN :
978-83-928756-4-2
