Title :
Influence of interface trap states and quantum mechanical effects on the drain current of In0.53Ga0.47As MOSFETs
Author :
Bin Shafi, Mohammad Atif ; Sutradhar, S. ; Debnath, Kapil ; Haque, Ashraful
Author_Institution :
Dept. of Electr. & Electron. Eng., East West Univ., Dhaka, Bangladesh
Abstract :
Effects of interface trap states (Dit) and quantum mechanical (QM) correction on the I-V characteristic of In0.53Ga0.47As surface channel enhancement-mode MOSFETs are investigated. A surface potential based compact model is used for the study. Dit affects the drain current by (i) stretching the gate voltage and (ii) lowering the carrier mobility. Stretching of the gate voltage is the dominant mechanism for the degradation of the subthreshold slope (SS) while reduction of the carrier mobility is the dominant mechanism for the degradation of the saturation drain current. QM effect also causes a lowering of the saturation drain current with negligible effect on SS.
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; indium compounds; In0.53Ga0.47As; Interface Trap States; QM effect; carrier mobility; drain current; gate voltage; interface trap state effect; quantum mechanical correction; quantum mechanical effects; saturation drain current; subthreshold slope; surface channel enhancement-mode MOSFET; surface potential based compact model; Degradation; Electric potential; Electron traps; Logic gates; MOSFET; Scattering; Semiconductor device modeling; InGaAs MOSFET; QM effect; drain current; interface trap states; surface potential;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482897
