Polarized radiation thermometry of silicon wafers at high temperature

In order to find suitable radiation thermometry of silicon semiconductor wafers during processing, we have measured temperature dependence of polarized emissivity and polarized transmissivity of the silicon wafer at moderately high temperature over 800 K and at wavelengths of 0.9 and 1.55 /spl mu/m. Based on experimental results, we propose new radiation thermometry for silicon wafers at high temperature.