DocumentCode
16208
Title
Three Fingerprints of Memristor
Author
Adhikari, Shyam Prasad ; Sah, Maheshwar Pd. ; Hyongsuk Kim ; Chua, Leon O.
Author_Institution
Div. of Electron. Eng., Chonbuk Nat. Univ., Jeonju, South Korea
Volume
60
Issue
11
fYear
2013
fDate
Nov. 2013
Firstpage
3008
Lastpage
3021
Abstract
This paper illustrates that for a device to be a memristor it should exhibit three characteristic fingerprints: 1) When driven by a bipolar periodic signal the device must exhibit a “pinched hysteresis loop” in the voltage-current plane, assuming the response is periodic. 2) Starting from some critical frequency, the hysteresis lobe area should decrease monotonically as the excitation frequency increases, and 3) the pinched hysteresis loop should shrink to a single-valued function when the frequency tends to infinity. Examples of memristors exhibiting these three fingerprints, along with non-memristors exhibiting only a subset of these fingerprints are also presented. In addition, two different types of pinched hysteresis loops; the transversal (self-crossing) and the non-transversal (tangential) loops exhibited by memristors are also discussed with its identification criterion.
Keywords
hysteresis; memristors; bipolar periodic signal; characteristic fingerprints; critical frequency; excitation frequency; hysteresis lobe area; memristor; nontransversal loop; pinched hysteresis loop; self-crossing loop; single-valued function; tangential loop; voltage-current plane; Generalized memristor; ideal memristor; lobe area; memristive device; memristor; non-transversal loop; pinched hysteresis loop; transversal loop;
fLanguage
English
Journal_Title
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher
ieee
ISSN
1549-8328
Type
jour
DOI
10.1109/TCSI.2013.2256171
Filename
6549211
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