• DocumentCode
    16208
  • Title

    Three Fingerprints of Memristor

  • Author

    Adhikari, Shyam Prasad ; Sah, Maheshwar Pd. ; Hyongsuk Kim ; Chua, Leon O.

  • Author_Institution
    Div. of Electron. Eng., Chonbuk Nat. Univ., Jeonju, South Korea
  • Volume
    60
  • Issue
    11
  • fYear
    2013
  • fDate
    Nov. 2013
  • Firstpage
    3008
  • Lastpage
    3021
  • Abstract
    This paper illustrates that for a device to be a memristor it should exhibit three characteristic fingerprints: 1) When driven by a bipolar periodic signal the device must exhibit a “pinched hysteresis loop” in the voltage-current plane, assuming the response is periodic. 2) Starting from some critical frequency, the hysteresis lobe area should decrease monotonically as the excitation frequency increases, and 3) the pinched hysteresis loop should shrink to a single-valued function when the frequency tends to infinity. Examples of memristors exhibiting these three fingerprints, along with non-memristors exhibiting only a subset of these fingerprints are also presented. In addition, two different types of pinched hysteresis loops; the transversal (self-crossing) and the non-transversal (tangential) loops exhibited by memristors are also discussed with its identification criterion.
  • Keywords
    hysteresis; memristors; bipolar periodic signal; characteristic fingerprints; critical frequency; excitation frequency; hysteresis lobe area; memristor; nontransversal loop; pinched hysteresis loop; self-crossing loop; single-valued function; tangential loop; voltage-current plane; Generalized memristor; ideal memristor; lobe area; memristive device; memristor; non-transversal loop; pinched hysteresis loop; transversal loop;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems I: Regular Papers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-8328
  • Type

    jour

  • DOI
    10.1109/TCSI.2013.2256171
  • Filename
    6549211