Title :
A physically based model for carrier freeze-out in Si- and SiGe-base bipolar transistors suitable for implementation in device simulators
Author :
Shaheed, M. Reaz ; Maziar, C.M.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
A physically based model for carrier freeze-out is presented. This model is implemented in the 2D drift-diffusion simulator PISCES and results of both Si and SiGe base transistor simulations are presented. The new model is shown to provide consistently accurate values for base sheet resistance for a variety of transistors over a wide range of temperatures
Keywords :
semiconductor device models; 2D drift-diffusion simulator; PISCES; Si; SiGe; base sheet resistance; bipolar transistors; carrier freeze-out; device simulators; physically based model; transistor simulations; Atomic measurements; Bipolar transistors; Computational modeling; Doping; Impurities; Ionization; Numerical simulation; Semiconductor process modeling; Statistics; Temperature distribution;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587892
