Title :
Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJTs
Author :
Wei, A. ; Kosier, S.L. ; Schrimpf, R.D. ; Combs, W.E. ; DeLaus, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
Abstract :
Excess collector current in irradiated NPN BJTs is linked to an oxide-trapped-charge-induced inversion layer acting as an additional emitter. Excess collector current is modeled by interpreting the inversion layer as an extension of the emitter
Keywords :
electron traps; emitter extension; excess collector current; inversion layer; irradiated NPN BJTs; oxide-trapped-charge-induced emitter; Analytical models; BiCMOS integrated circuits; Computational modeling; Computer simulation; Cranes; Degradation; Equations; Geometry; Ionizing radiation; Radiative recombination;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587894
