Title :
Improvement of the triangular MOS transistor for misalignment measurement
Author :
Lozano, M. ; Cane, C. ; Perelló, C. ; Anguita, J. ; Lora-Tamayo, E.
Author_Institution :
Centro Nacional de Microelectron., Univ. Autonoma de Barcelona, Spain
Abstract :
An improvement of the triangular gate MOS transistor for misalignment measurement between gate and active area levels is presented. The number of devices required for the simultaneous determination of X and Y misalignment is reduced from four to three, resulting in a very compact structure with just four pads. Although this simplification is obtained at the cost of an increment of the complexity of the calculations, a simple iterative algorithm is enough to solve them. Two different device arrangements have been designed and fabricated with a NMOS/CMOS, 5-μm, polysilicon gate technology
Keywords :
CMOS integrated circuits; MOS integrated circuits; insulated gate field effect transistors; integrated circuit testing; iterative methods; NMOS/CMOS; active area levels; compact structure; complexity; iterative algorithm; misalignment measurement; polysilicon gate technology; triangular MOS transistor; Area measurement; Bridge circuits; Costs; Electric variables measurement; Equations; Iterative algorithms; Length measurement; MOSFETs; Vectors; Voltage measurement;
Conference_Titel :
Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-87942-588-1
DOI :
10.1109/ICMTS.1990.161724
