• DocumentCode
    1622148
  • Title

    Solid-State Repetitive SOS-Based Generators Providing a Peak Power of GW-Range

  • Author

    Bushlyakov, Alexei I. ; Lyubutin, Sergei K. ; Ponomarev, Andrey V. ; Rukin, Sergei N. ; Slovikovsky, Boris G. ; Timoshenkov, Sergei P. ; Tsyranov, Sergei N.

  • Author_Institution
    Inst. of Electrophys. Russian Acad. of Sci., St., Ekaterinburg
  • fYear
    2007
  • Firstpage
    488
  • Lastpage
    488
  • Abstract
    Summary form only given. The paper describes high-current nanosecond generators providing a peak power of GW-range. The first generator of S-5NS type has output peak power of up to 4 GW, output voltage of 0.4-1 MV, pulse length of 8-10 ns, and pulse repetition rate of 300 Hz in the continuous mode and up to 1 kHz in the burst mode of operation. The average output power is up to 30 kW at the pulse repetition rate of 1 kHz. The generator is outfitted with an all-solid-state system of energy switching. The output pulse is formed by a semiconductor opening switch comprising SOS diodes. The electric circuit and the design of the generator have been described. Experimental results have been given. A device for elimination of prepulses across the load has been proposed. Testing results and numerical modeling of the device have been reported. The second pulser presents a multifunctional SOS-based generator of SM-6N type that has been developed in different versions. At GW-range of peak power the generator provides pulse width of 20 -30 ns in long pulse version, and 7 -10 ns in short pulse version. Typical value of the output voltage is 400 to 800 kV. The generator operates continuously at pulse repetition frequency of 300 Hz, and up to 2 kHz in the burst mode of operation. The electric circuits and the design of the generator, as well as testing results have been described.
  • Keywords
    pulsed power technology; semiconductor diodes; GW-range; SOS diodes; frequency 1 kHz; frequency 300 Hz; high-current nanosecond generator; pulse repetition frequency; semiconductor opening switch; solid-state power switch; solid-state repetitive SOS-based generator; voltage 0.4 MV to 1 MV; voltage 400 kV to 800 kV; Circuit testing; Numerical models; Power generation; Power semiconductor switches; Power system modeling; Pulse generation; Semiconductor diodes; Solid state circuits; Space vector pulse width modulation; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 2007. ICOPS 2007. IEEE 34th International Conference on
  • Conference_Location
    Albuquerque, NM
  • ISSN
    0730-9244
  • Print_ISBN
    978-1-4244-0915-0
  • Type

    conf

  • DOI
    10.1109/PPPS.2007.4345794
  • Filename
    4345794