DocumentCode
1623201
Title
Application of a cluster tool for interface engineering of polysilicon emitters
Author
Reuss, Robert H. ; Werkhoven, C. ; Granneman, E. ; Hendricks, M.
Author_Institution
Motorola Semiconductor Products Sector, Phoenix, AZ, USA
fYear
1993
Firstpage
49
Lastpage
52
Abstract
A cluster tool technique featuring in situ vapor HF etch and controlled ultra-thin oxide growth prior to polysilicon deposition is evaluated for poly emitter device fabrication. Detailed parametric analysis shows that only base current is modified. Interface engineering enables current gain to be verified as a function of oxide thickness. Process control is improved compared to conventional processing
Keywords
cluster tools; Si; advanced BiCMOS process; cluster tool technique; controlled ultrathin oxide growth; current gain; elemental semiconductor; in situ vapor HF etch; interface engineering; oxide thickness; parametric analysis; polysilicon emitters; process control; vacuum operated tool; Process control;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-1316-X
Type
conf
DOI
10.1109/BIPOL.1993.617468
Filename
617468
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