DocumentCode
162429
Title
Reliability and high field related issues in GaN-HEMT devices — Part I
Author
Meneghesso, Gaudenzio ; Zanoni, Enrico ; Meneghini, Matteo
Author_Institution
Dept. of Inf. Eng., Univ. of Padova, Padua, Italy
fYear
2014
fDate
13-15 Oct. 2014
Firstpage
1
Lastpage
171
Abstract
AlGaN/GaN technology for microwave and switching power applications has reached significant levels of maturity, with off-state critical voltages in excess of 200 V for 0.25 μm gate devices, and extrapolated lifetimes exceeding 2 × 105 hours at 175°C, 42 V, 10 GHz.
Keywords
III-V semiconductors; aluminium compounds; failure analysis; gallium compounds; power HEMT; semiconductor device breakdown; semiconductor device reliability; wide band gap semiconductors; AlGaN-GaN; GaN-HEMT devices; extrapolated lifetimes; failure mechanisms; frequency 10 GHz; off-state critical voltages; reliability; size 0.25 mum; temperature 175 degC; time-dependent AlGaN breakdown; voltage 42 V; Charge carrier processes; Educational institutions; Gallium nitride; HEMTs; MODFETs; Reliability; Tutorials;
fLanguage
English
Publisher
ieee
Conference_Titel
Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop on
Conference_Location
Knoxville, TN
Type
conf
DOI
10.1109/WiPDA.2014.6964610
Filename
6964610
Link To Document