• DocumentCode
    162437
  • Title

    Advances in reliability and operation space of high-voltage GaN power devices on Si substrates

  • Author

    Wu, Y.-F. ; Guerrero, Juan ; McKay, Judith ; Smith, K.

  • Author_Institution
    Transphorm Inc., Goleta, CA, USA
  • fYear
    2014
  • fDate
    13-15 Oct. 2014
  • Firstpage
    30
  • Lastpage
    32
  • Abstract
    GaN-on-Si power devices have advantages in both performance and the potential for low cost and high volume production. Advances have been made in extended reliability tests exhibiting an intrinsic life time >106 hours for qualified 600-V GaN HEMT products. Experimental kV-class devices have shown CW operation at 800V with >99% efficiency at 100 kHz and a 2:1boost ratio. Both are exciting developments reaffirming the validity of the new power semiconductor technology.
  • Keywords
    III-V semiconductors; gallium compounds; power semiconductor devices; semiconductor device reliability; wide band gap semiconductors; GaN-Si; Si; frequency 100 kHz; high-voltage GaN power devices; kV-class devices; power semiconductor technology; reliability; silicon substrates; voltage 600 V; voltage 800 V; Gallium nitride; HEMTs; Logic gates; Performance evaluation; Silicon; Silicon carbide; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop on
  • Conference_Location
    Knoxville, TN
  • Type

    conf

  • DOI
    10.1109/WiPDA.2014.6964618
  • Filename
    6964618
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=162437