Title :
Macro-modeling for MOS device simulation
Author :
Rodrigo-Rodriguez, T. ; Gutiérrez-D, Edmundo A. ; Arturo-Sarmiento, R. ; Selberherr, Siegfried
Author_Institution :
Inst. fur Microelectron., Technische Univ. Wien, Austria
fDate :
6/24/1905 12:00:00 AM
Abstract :
By making use of the MOS diode theory, the carrier, and current distribution, as well as the mobility in a MOS device is evaluated. Simple analytical expressions are used for parameters like mobility, carrier concentration, and transversal electric field. Agreement between experimental and simulated results from an LDD MOSFET and an n-well resistance is in agreement, probing this approach is suitable as a plug-in model tester for quick model evaluation.
Keywords :
MIS devices; MOSFET; carrier density; carrier mobility; semiconductor device models; LDD MOSFET; MOS device simulation; MOS diode theory; carrier concentration; carrier distribution; carrier mobility; current distribution; macro-model; n-well resistance; plug-in model tester; transversal electric field; Circuit simulation; Conductivity; Electrons; MOS devices; MOSFETs; Mathematical model; Nanoscale devices; Resistors; Surface resistance; Voltage;
Conference_Titel :
Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
Print_ISBN :
0-7803-7380-4
DOI :
10.1109/ICCDCS.2002.1004026
