• DocumentCode
    1626603
  • Title

    DC and flicker noise models for passivated single-walled carbon nanotube transistors

  • Author

    Yu, Lin ; Kim, Sunkook ; Mohammadi, Saeed

  • Author_Institution
    Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
  • fYear
    2010
  • Firstpage
    111
  • Lastpage
    112
  • Abstract
    DC and intrinsic low frequency noise properties of p-channel depletion-mode single-walled carbon nanotube field effect transistors (SWCNT-FETs) are investigated. To characterize the intrinsic noise properties a thin atomic layer deposited (ALD) HJO2 gate dielectric which also works as a passivation layer is used to isolate SWCNT-FETs from environmental factors.
  • Keywords
    atomic layer deposition; carbon nanotubes; environmental factors; field effect transistors; flicker noise; passivation; semiconductor device noise; DC; SWCNT-FET; atomic layer deposited gate dielectric; environmental factors; flicker noise models; intrinsic low frequency noise property; intrinsic noise property; p-channel depletion-mode single-walled carbon nanotube field effect transistors; passivated single-walled carbon nanotube transistors; passivation layer; Carbon nanotubes; Current measurement; Logic gates; Metals; Noise; Noise measurement; Schottky barriers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2010
  • Conference_Location
    South Bend, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-6562-0
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2010.5551865
  • Filename
    5551865
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1626603