Title :
Temperature dependence of Ge quantum well light emitting diode on Si substrate
Author :
Fei, Edward T. ; Huo, Yijie ; Chen, Xiaochi ; Miller, Gerald ; Zang, Kai ; Chen, Yusi ; Liu, Xi ; Edwards, Elizabeth H. ; Miller, David A B ; Dutt, Raj ; Kamins, Theodore I. ; Harris, James S.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
We present the Ge/SiGe quantum well structure as a candidate for CMOS compatible light source. Thermal enhancement of electroluminescence from temperature dependent measurements agree with theory and indicates promise for an efficient Ge light source.
Keywords :
Ge-Si alloys; electroluminescence; elemental semiconductors; germanium; integrated optoelectronics; light emitting diodes; quantum well devices; semiconductor quantum wells; CMOS compatible light source; Ge-SiGe; Ge-SiGe quantum well structure; Si; Si substrate; electroluminescence; quantum well light emitting diode; temperature dependent measurements; thermal enhancement; Electroluminescence; Laser excitation; Photonic band gap; Silicon; Silicon germanium; Temperature dependence; Temperature measurement;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324112
