Title :
Cryogenically cooled HEMT´s from the device towards the applications
Author :
Llopis, O. ; Escotte, L.
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
Abstract :
The essential low temperature electrical characteristics of HEMT devices are presented. The emphasis is put on practical aspects of prime importance for the circuit designer such as the collapse preventing techniques or the noise behaviour. Some examples of cryogenic analog circuits are then described with their performances compared to their ambient temperature counterparts
Keywords :
HEMT integrated circuits; cryogenic electronics; field effect analogue integrated circuits; integrated circuit design; integrated circuit noise; analog circuits; circuit design; collapse preventing techniques; cryogenically cooled HEMTs; low temperature electrical characteristics; noise behaviour; Circuit noise; Cryogenics; Cutoff frequency; HEMTs; MODFETs; Noise figure; Pulse measurements; Semiconductor device noise; Superconducting device noise; Temperature;
Conference_Titel :
Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on
Conference_Location :
San Francisco
Print_ISBN :
0-7803-2516-8
DOI :
10.1109/ISSSE.1995.498003
