Noise and gain measurements of high-power 1.3-μm InGaAsP/InP tapered amplifiers

Author

Betts, G.E. ; Donnelly, J.P. ; Walpole, J.N. ; Groves, S.H. ; O´Donnell, Frederick J. ; Missaggia, L.J. ; Bailey, R.J. ; Napoleone, A.

Author_Institution

Lincoln Lab., MIT, Lexington, MA, USA

fYear

1997

Firstpage

265

Lastpage

266

Abstract

We report gain and noise measurements on an improved InGaAsP/InP tapered semiconductor amplifier. These results represent the highest gain and output power achieved from one of these amplifiers. The amplifier structure has a single-mode ridge waveguide at the input, followed by a tapered gain region wherein the beam expands by diffraction with no transverse index guiding. Both facets are antireflection-coated to roughly 1% reflectivity. The actual feedback from the front facet is <1% because of diffraction. The active layer consists of three compressively strained quantum wells. This device is polarization sensitive, and all results reported use the TE polarization (parallel to the plane of the active layer)

Keywords

III-V semiconductors; gain measurement; gallium arsenide; indium compounds; laser noise; laser variables measurement; quantum well lasers; waveguide lasers; 1.3 micron; InGaAsP-InP; InGaAsP/InP tapered amplifiers; TE polarization; active layer; antireflection-coated facets; compressively strained quantum wells; gain measurements; high-power; noise measurements; optical power measurements; polarization sensitive; single-mode ridge waveguide; tapered gain region; tapered semiconductor amplifier; Diffraction; Gain measurement; High power amplifiers; Indium phosphide; Noise measurement; Polarization; Power amplifiers; Power generation; Semiconductor device noise; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication. OFC 97., Conference on

Conference_Location

Dallas, TX

Print_ISBN

1-55752-480-7

Type

conf

DOI

10.1109/OFC.1997.719876

Filename

719876