Epitaxial growth mechanism of silicene on Ag(111)

Author

Xun Xu ; Jincheng Zhuang ; Yi Du ; Eilers, Stefan ; Peleckis, Germanas ; Waikong Yeoh ; Xiaolin Wang ; Shi Xue Dou ; Kehui Wu

Author_Institution

Inst. for Supercond. & Electron. Mater. (ISEM), Univ. of Wollongong, Wollongong, NSW, Australia

fYear

2014

fDate

2-6 Feb. 2014

Firstpage

28

Lastpage

30

Abstract

We report on the epitaxial growth mechanism of silicene layers fabricated on a Ag(111) surface by molecular beam epitaxial deposition. The coverage effect and the structural defects have been characterized using scanning tunneling microscopy (STM). It is found that substrate temperature plays an important role in the formation of silicene in different structures. Several kinds of defects are observed in different phases of silicene, which are most likely induced by the low coverage effect and the structural mismatch between the silicene and the Ag(111) surface. The Silicene sheet prefers to first emerge at the terrace edge of the substrate. Our results indicate that the growth mechanism of silicene follows the Stranski-Krastanov growth mode for all structures.

Keywords

elemental semiconductors; molecular beam epitaxial growth; scanning tunnelling microscopy; semiconductor epitaxial layers; silicon; Ag; Ag(111) surface; STM; Si; Stranski-Krastanov growth mode; molecular beam epitaxial deposition; scanning tunneling microscopy; silicene layer fabrication; silicene phase; silicene sheet; structural defects; substrate temperature; terrace edge; Atomic layer deposition; Epitaxial growth; Silicon; Silver; Substrates; Temperature measurement; STM; coverage; defect; epitaxial; growth mechanism; silicene;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscience and Nanotechnology (ICONN), 2014 International Conference on

Conference_Location

Adelaide, SA

Type

conf

DOI

10.1109/ICONN.2014.6965253

Filename

6965253