Title :
Silicon substrate integration of BST based tunable TFBARs using all-dielectric SiO2/AlN Bragg reflectors
Author :
Vorobiev, A. ; Berge, J. ; Norling, M. ; Gevorgian, S.
Author_Institution :
Chalmers Univ. of Technol., Gothenburg, Sweden
Abstract :
Integration possibilities of BaxSr1-xTiO3 (BST) based tunable thin film bulk acoustic wave resonators (TFBAR) using all-dielectric SiO2/AlN Bragg reflectors deposited on a high resistivity silicon strate are considered. SiO2/AlN reflectors withstand the high deposition temperature (>600C) of the BST films opening up possibilities for heterogeneous integration of complex microwave circuits.
Keywords :
Bragg gratings; acoustic resonators; barium compounds; bulk acoustic wave devices; dielectric devices; microwave circuits; silicon compounds; strontium compounds; titanium compounds; BST; BaxSr1-xTiO3; SiO2-AlN; all-dielectric Bragg reflectors; heterogeneous integration; microwave circuits; silicon substrate integration; tunable thin film bulk acoustic wave resonators; Acoustic waves; Binary search trees; Conductivity; Film bulk acoustic resonators; Semiconductor thin films; Silicon; Sputtering; Strontium; Substrates; Tunable circuits and devices; FBAR; Si-integration; TFBAR; acoustic Bragg reflector ferroelectric; induced piezoelectric effect;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-5456-3
DOI :
10.1109/SMIC.2010.5422942
