Title :
A high voltage, high speed polysilicon emitter bipolar transistor
Author :
McArthur, Douglas C. ; Conner, George
Author_Institution :
Philips Semiconductors, Sunnyvale, CA, USA
Abstract :
A high voltage polysilicon emitter bipolar transistor has been developed. The transistor exhibits a β - early voltage product of 12,000 and BVcbo, BVceo values of 60 and 30 volts, respectively and a cut-off frequency of 5.5 GHz. The design and fabrication of this transistor is described. A comparison of this device with other high voltage analog BJTs is made. It is shown that the use of bipolar scaling techniques on the design of high voltage BJTs results in very high performance analog devices
Keywords :
microwave bipolar transistors; 26 V; 5.5 GHz; Si; bipolar scaling techniques; bipolar transistor; cut-off frequency; design; elemental semiconductor; fabrication; high speed polysilicon emitter; high voltage; very high performance analog devices; Microwave bipolar transistors;
Conference_Titel :
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1993.617484
