DocumentCode
1628059
Title
GHz response of Si photodiodes fabricated with 0.35-µm Si BiCMOS technology
Author
Maekita, Kazuaki ; Shimotori, Toshiyuki ; Maruyama, Takeo ; Iiyama, Koichi
Author_Institution
Natural Sci. & Technol., Kanazawa Univ., Ishikawa, Japan
fYear
2012
Firstpage
267
Lastpage
269
Abstract
We fabricated Si photodiode from 0.35 μm BiCMOS process and measured the sensitivity and the frequency response at the wavelength of 650nm. The responsivity was 0.11 A/W and the bandwidth was about 1 GHz.
Keywords
BiCMOS integrated circuits; elemental semiconductors; photodiodes; silicon; BiCMOS technology; GHz response; Si; frequency response; photodiodes; responsivity; sensitivity; size 0.35 mum; wavelength 650 nm; Bandwidth; BiCMOS integrated circuits; Breakdown voltage; High speed optical techniques; Optical device fabrication; Optical sensors; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location
San Diego, CA
ISSN
1949-2081
Print_ISBN
978-1-4577-0826-8
Type
conf
DOI
10.1109/GROUP4.2012.6324155
Filename
6324155
Link To Document