DocumentCode :
1628778
Title :
Lateral PIN current-injected photonic crystal nanocavity light emitting diodes based on Ge quantum dots
Author :
Xu, Xuejun ; Tsuboi, Toshiki ; Usami, Noritaka ; Maruizumi, Takuya ; Shiraki, Yasuhiro
Author_Institution :
Adv. Res. Labs., Tokyo City Univ., Tokyo, Japan
fYear :
2012
Firstpage :
331
Lastpage :
333
Abstract :
Current-injected light emitting diodes based on Ge quantum dots in photonic crystal nanocavities are demonstrated by using lateral PIN diode structure. A sharp resonant peak with Q-factor of 1560 is obtained in the electroluminescence spectrum.
Keywords :
Q-factor; electroluminescence; elemental semiconductors; germanium; light emitting diodes; nanophotonics; p-i-n diodes; photonic crystals; semiconductor quantum dots; Ge; Q-factor; electroluminescence spectrum; lateral PIN current-injected light emitting diodes; lateral PIN diode structure; photonic crystal nanocavity; quantum dots; sharp resonance; Cavity resonators; Light emitting diodes; PIN photodiodes; Photonic crystals; Q factor; Quantum dots; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
ISSN :
1949-2081
Print_ISBN :
978-1-4577-0826-8
Type :
conf
DOI :
10.1109/GROUP4.2012.6324177
Filename :
6324177
Link To Document :
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