Title :
Time-resolved photoluminescence study of highly n-doped germanium grown on silicon
Author :
Kako, S. ; Okumura, T. ; Oda, K. ; Suwa, Y. ; Saito, S. ; Ido, T. ; Arakawa, Y.
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
Abstract :
We report on the photoluminescence dynamics of highly n-doped tensile-strained germanium on silicon. The instantaneous decay photoluminescence lifetime changes with intensity, which is explained by the interplay of Shockley-Read Hall and Auger processes.
Keywords :
elemental semiconductors; germanium; photoluminescence; semiconductor epitaxial layers; spectral line intensity; time resolved spectra; Ge-Si; Shockley-Read Hall-Auger processes; instantaneous decay photoluminescence lifetime; n-doped tensile-strained germanium on silicon; time-resolved photoluminescence; Germanium; Laser excitation; Photoluminescence; Radiative recombination; Silicon; Simulation;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324180
