• DocumentCode
    1629271
  • Title

    Fabrication and RF performance of InAs nanowire FET

  • Author

    Prost, W. ; Tegude, F.J.

  • Author_Institution
    Solid State Electron. Dept., Univ. of Duisburg-Essen, Duisburg, Germany
  • fYear
    2010
  • Firstpage
    279
  • Lastpage
    282
  • Abstract
    We report on fabrication of single and multiple InAs nanowire metal-insulator field-effect transistor (NWMISFET). An omega shaped top gate is employed for easier fabrication and heterogeneous integration while still maintaining an almost full surrounding of the wire. An outstanding DC performance of InAs NW-FETs with a SiNχ gate dielectric has already been reported.
  • Keywords
    MISFET; indium alloys; nanowires; InAs; NWMISFET; metal-insulator field-effect transistor; nanowire FET; omega shaped top gate; Annealing; Argon; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2010
  • Conference_Location
    South Bend, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-6562-0
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2010.5551958
  • Filename
    5551958
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1629271