• DocumentCode
    1630061
  • Title

    DC characteristics of high performance self-aligned bulk-Si dual-channel source/drain-tied MOSFETs

  • Author

    Fan, Yi-Hsuan ; Lin, Jyi-Tsong ; Eng, Yi-Chuen

  • Author_Institution
    Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
  • fYear
    2010
  • Firstpage
    1677
  • Lastpage
    1679
  • Abstract
    We present a novel bulk-Si dual-channel source/drain-tied (DCSDT) MOSFET with the multiple epitaxial growth of SiGe/Si layers, and selective SiGe removal to form the block oxide island (BOI). Based on the simulations, the SDT scheme achieves better DC characteristics than body-tied (BT) scheme such as: Ion (20% increased), Ioff (71% reduced), Rsd (5.3% decreased), S.S. (19% improved), DIBL (35% reduced), τ (15.5% reduced), 1/τ (17.1% increased), and significantly improved thermal stability. Furthermore, the designed process is totally self-aligned, which is a promising candidate for future device scaled down.
  • Keywords
    Ge-Si alloys; MOSFET; epitaxial growth; silicon; thermal stability; SiGe-Si; block oxide island; body-tied scheme; epitaxial growth; self-aligned dual-channel source-drain-tied MOSFET; thermal stability; Logic gates; MOSFETs; Silicon germanium; Stability analysis; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667375
  • Filename
    5667375
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1630061